期刊
OPTICS EXPRESS
卷 21, 期 4, 页码 3932-3940出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.21.003932
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资金
- Spanish Ministry of Science and Innovation SINADEC [TEC2008-06333]
- Universidad Politecnica de Valencia [PAID2011/1914]
- J. Matres' doctoral grant
- [PROMETEO/2010/087 NANOFOTONICA]
The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient gamma is measured by four-wave-mixing and the imaginary part of gamma is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient gamma and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples. (C) 2012 Optical Society of America
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