期刊
出版社
ELSEVIER SCIENCE INC
DOI: 10.1016/j.precisioneng.2017.11.012
关键词
Single crystal silicon carbide; SiC ingot; SiC wafer; Slicing; Electrical discharge machining; Foil tool electrode
类别
资金
- Japan Society for the Promotion of Science [15H06138]
Recently, a multi-wire electrical discharge slicing (EDS) process has been proposed for slicing SiC ingots into wafers. A significant reduction in kerf loss is expected with this method compared with the conventional multi wire saw method. However, this process entails a high risk of wire breakage. Therefore, in the present study, a novel electrical discharge slicing process utilizing a running ultra-thin foil tool electrode is demonstrated for the slicing of SiC ingots. Relative to multi-wire EDS, the risk of tool breakage can be reduced with this new technique by increasing the tool cross-sectional area. A 25-mm (1-inch) SiC ingot was successfully sliced with the proposed method and a kerf loss of about 100 pm was achieved by utilizing a foil tool electrode with a thickness of 50 pm. This paper summarizes the specific characteristics and results of this process, including the machining stability, machining strategy, selection of foil tool material and multiple simultaneous slicing.
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