Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics

We repotted a noel aqueous route to fabricate Ga2O3 dielectric at low temperature; The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 degrees C. Furthermore, all aqueous :solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 degrees C showed mobilities of 1.0 and 4.1 cm(2) V-1 s(-1), on/off current ratio of similar to 10(5), low operating voltages of 4 Viand negligible hysteresis. Our study represents a significant step-toward the development of low-cost, low-temperature, and large-area green oxide electronics.