期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 27, 页码 14720-14725出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b02451
关键词
aqueous route; gallium oxide dielectric; indium oxide; oxide thin-film transistors; low-temperature; green oxide electronics
资金
- Research Grants Council of Hong Kong [AoE/P-03/08, N_CUHK405/12]
- CUHK Group Research Scheme
- National Science Foundation of China [61229401]
We repotted a noel aqueous route to fabricate Ga2O3 dielectric at low temperature; The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 degrees C. Furthermore, all aqueous :solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 degrees C showed mobilities of 1.0 and 4.1 cm(2) V-1 s(-1), on/off current ratio of similar to 10(5), low operating voltages of 4 Viand negligible hysteresis. Our study represents a significant step-toward the development of low-cost, low-temperature, and large-area green oxide electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据