期刊
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XI
卷 195, 期 -, 页码 235-+出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/SSP.195.235
关键词
high aspect ratio structures; wetting; Cassie-Baxter; Wenzel; pattern collapse
In semiconductor fabrication, pattern collapse of high aspect ratio structures after wet processing has been a critical issue and attracted a lot of interest. On the other hand, very little attention is spent on the potential wetting issues as feature dimensions are continuously scaled down and novel materials with different wetting properties are used in new technology nodes. In this work we investigate the wettability of nano-patterned silicon substrates with different surface modifications.
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