4.5 Article

Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics

期刊

PHYSICS LETTERS A
卷 382, 期 11, 页码 739-748

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2018.01.016

关键词

Complex oxide; Heterostructures; Interfacial physics; Electronic density of states; Scanning tunneling microscopy; Electronic band diagram

资金

  1. U.S. National Science Foundation, Division of Materials Research (DMR) [DMR-1710512]

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Complex oxide heterostructure interfaces have shown novel physical phenomena which do not exist in biilk materials. These heterostructures can be used in the potential applications in the next generation devices and served as the playgrounds for the fundamental physics research. The direct measurements of the interfaces with excellent spatial resolution and physical property information is rather difficult to achieve with the existing tools. Recently developed cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S) for complex oxide interfaces have proven to be capable of providing local electronic density of states (LDOS) information at the interface with spatial resolution down to nanometer scale. In this perspective, we will briefly introduce the basic idea and some recent achievements in using XSTM/S to study complex oxide interfaces. We will also discuss the future of this technique and the field of the interfacial physics. (C) 2018 Elsevier B.V. All rights reserved.

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