期刊
PHYSICAL REVIEW LETTERS
卷 120, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.120.016801
关键词
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资金
- U.S. Department of Defense [N00014-16-1-2814]
- U.S. Army Research Office [W911NF-16-1-0280]
- U.S. National Science Foundation [DMR 1531389]
- MRSEC Program of U.S. National Science Foundation [DMR 1720256]
- Direct For Mathematical & Physical Scien [1531389] Funding Source: National Science Foundation
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.
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