期刊
PHYSICAL REVIEW LETTERS
卷 120, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.120.167701
关键词
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资金
- Engineering and Physical Sciences Research Council (EPSRC) through UNDEDD [EP/K025945/1]
- European Union's Horizon research and innovation programme [688539]
- European Community's Seventh Framework Programme [279781, 615767]
- Agence Nationale de la Recherche through project QIPSE
- Engineering and Physical Sciences Research Council [1303280, EP/K025945/1] Funding Source: researchfish
- European Research Council (ERC) [615767, 279781] Funding Source: European Research Council (ERC)
- EPSRC [EP/K025945/1] Funding Source: UKRI
We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains vertical bar epsilon vertical bar < 10(-5). Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nano-structures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning-shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10(-6)-as well as opportunities for coupling to mechanical resonators.
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