期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 12, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201800155
关键词
granular; MOCVD; Sb2Te3; topological insulators; weak antilocalization
资金
- European Union Seventh Framework Programme (FP7/2007-2013) [310339]
Topological insulator (TI) properties of granular Sb2Te3 thin films, grown by MOCVD at room temperature on 4 SiO2/Si substrates, are investigated. The negative magneto-conductance (MC), analyzed in terms of the Hikami-Larkin-Nagaoka theory, reveals the presence of a clear weak antilocalization (WAL) effect, thus demonstrating the TI character of our system. The extracted WAL prefactor () values are explained in terms of the film conductance, in agreement with the existing models for WAL in transport disordered systems. The dephasing length (l phi) dependence on temperature is affected by the grain size of the film and might in turn explain the observed temperature dependence of and of the conductance. These results demonstrate the feasibility of technologically-relevant processes to synthesize TIs films, at the same time providing a tool to investigate the effects of the film microstructure on the topological character of their transport properties.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据