期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 216, 期 5, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201700833
关键词
amorphous oxide semiconductor; gallium oxide; rare earth; thin-film phosphor
资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) though Element Strategy Initiative to Form Core Research Center
- ACCEL Project - Japan Science and Technology Agency (JST)
- Japan Society for the Promotion of Science (JSPS) [25106007]
- Support for Tokyotech Advanced Research (STAR)
- PRESTO, JST [JPMJPR16R1]
- JSPS [16K14377, 17K14548, 17H01318]
- [15H05543]
- Grants-in-Aid for Scientific Research [25106007, 17K14548, 16K14377, 17H01318, 15H05543] Funding Source: KAKEN
Multi-color inorganic thin-film phosphors are deposited at room temperature on glass substrates using ultra-wide bandgap amorphous gallium oxide (a-GO) as a host material. All of the a-GO films doped with four kinds of rare-earth ions (a-GO:REx) emit visible light, originating from the RE ions, by 238-257 nm ultraviolet light excitation; that is, blue & red emission from RE = Pr3+, red from Sm3+, green from Tb3+, and blue and yellow from Dy3+. The a-GO:Pr-x and a-GO:Tb-x films emit bright light clearly visible by human eyes. Although the internal quantum efficiencies of unannealed a-GO:Pr-0.02 and a-GO:Tb-0.02 films are 0.2 and 1.8%, respectively, those are improved to 2.4 and 3.8 %, respectively, by post-deposition thermal annealing in O-2 at 400 degrees C through desorption of weakly-bonded oxygen and structural relaxation. On the other hand, the annealing temperature to improve photoluminescence is limited by crystallization (onset temperatures 400-500 degrees C).
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