期刊
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
卷 97, 期 -, 页码 335-339出版社
ELSEVIER
DOI: 10.1016/j.physe.2017.12.012
关键词
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资金
- National Natural Science Foundation of China [11374002]
- Scientific Research Fund of Hunan Provincial Education Department [17A001]
- Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- construct program of the key discipline in hunan province
We investigate the Goos-Hanchen(GH) shift for ballistic electrons (i) reflected from a step-like inhomogeneity of strain, and (ii) transmitted through a monolayer phosphoresce junction consisting of a positive strained region and two normal regions (or a normal region and two negative strained regions). Refraction occurs at the interface between theunstrained/positive-strain(negative-strain/unstrained), in analogy with optical refraction. The critical angle is different for different strengths and directions of the strains. The critical angles for electrons tunneling through unstrained/positive-strain junction can even decrease to zero when the positive strain exceeds a critical value. For the monolayer phosphorene junction consisting of a positive strain region and two normal regions (or a normal region and two negative strain regions), we find that the GH shifts resonantly depends on the middle region width. The resonant values and the plus-minus sign of the displacement can be controlled by the incident angle, incident energy and the strain. These properties will be useful for the applications in phosphorene-based electronic devices.
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