期刊
PHYSICA B-CONDENSED MATTER
卷 535, 期 -, 页码 99-101出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2017.06.070
关键词
Silicon; Laplace-DLTS; Irradiation
资金
- National Research Foundation of South Africa [98961]
- University of Pretoria
In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7x10(6) cm(-2) s(-1) at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1x10(10) cm(-2), the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (C-i) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.
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