期刊
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS
卷 28, 期 -, 页码 106-110出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.photonics.2017.10.003
关键词
Light-emitting diodes; Ultraviolet; Nanowire; FDTD; Absorption; Photonic integrated circuits
资金
- New Jersey Institute of Technology (NJIT)
- National Science Foundation [EEC-1560131]
- Div Of Engineering Education and Centers
- Directorate For Engineering [1560131] Funding Source: National Science Foundation
We report our study on the effect of optical absorption in nanowire ultraviolet light-emitting diodes (LEDs) using three-dimensional finite difference time domain simulation. Utilizing nanowire structures can avoid the emission of guided modes inside LED structure and redirect the trapped light into radiated modes. The optical loss due to material absorption can be decreased by reducing light propagation path inside the LED structure, and consequently enhance the light extraction efficiency (LEE). Nanowire form factors including size, and density play important roles on the LEE of ultraviolet (UV) nanowire LEDs. In this paper, the nanowire spacing and diameter are considered in simulation to reach maximum LEE. Our results show an unprecedentedly high LEE of similar to 34% can be achieved for deep UV emission at 240 nm. Moreover, UV nanowire LEDs with random structure can exhibit LEE of similar to 19% which is comparable or higher than that of high efficiency UV thin-film LEDs. Published by Elsevier B.V.
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