期刊
RESEARCH ON MECHANICS, DYNAMIC SYSTEMS AND MATERIAL ENGINEERING
卷 625, 期 -, 页码 230-234出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/AMR.625.230
关键词
SiC nanotube; first-principles calculations; antisite defect; electronic structure; optical properties
Based on first-principle calculations, electronic structure and optical properties of a single-walled zigzag SiC nanotube with silicon antisite defect have been investigated. This defect results in the formation of a bump in the surface of the nanotube. No defect energy level is formed in its band gap, which is originated from the resonance between the defect level and conduction band resulting in the defect level entering its conduction band. The most primary dielectric peak in dielectric function parallel to the axis of the nanotube is depressed, while the first peak perpendicular to its axis is enhanced. These results are meaningful for investigations on SiCNT electronic and optical devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据