期刊
ADVANCED X-RAY CHARACTERIZATION TECHNIQUES
卷 620, 期 -, 页码 22-+出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/AMR.620.22
关键词
InGaN; light-emitting diode; x-ray diffraction; multi-quantum-well
资金
- Universiti Sains Malaysia
- Universiti Tun Hussein Our Malaysia
- Universiti Malaya and Ministry of Higher Education Malaysia
- RU
- Exploratory Research Grant Scheme (ERGS) [ER012-2011A]
- University of Malaya Research Grant (UMRG) [RG141-11AFR]
This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2 theta-scan proved the composition of GaN (0002) and (0004) at 34.63 degrees and 72.98 degrees, respectively. Rocking curve phi-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of similar to 60 degrees. From x-ray rocking curve (XRC) omega-scan, screw and mix dislocation density is found as 2.85 x 10(9) cm(-2), while pure edge dislocation density is found as 2.23 x 10(11) cm(-2).
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