Compositional and Structural Characterization of Heterostructure InGaN-based Light-Emitting Diode by High Resolution X-Ray Diffraction

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2 theta-scan proved the composition of GaN (0002) and (0004) at 34.63 degrees and 72.98 degrees, respectively. Rocking curve phi-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of similar to 60 degrees. From x-ray rocking curve (XRC) omega-scan, screw and mix dislocation density is found as 2.85 x 10(9) cm(-2), while pure edge dislocation density is found as 2.23 x 10(11) cm(-2).