期刊
OPTICS LETTERS
卷 43, 期 6, 页码 1215-1218出版社
OPTICAL SOC AMER
DOI: 10.1364/OL.43.001215
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- Ministry of Science and Technology, Taiwan (MOST) [MOST 104-2923-E-194-003-MY3, MOST 105-2221-E-194-030]
We report GeSn p-i-n resonant-cavity-enhanced photodetectors (RCEPDs) grown on silicon-on-insulator substrates. A vertical cavity, composed of a buried oxide as the bottom reflector and a deposited SiO2 layer on the top surface as the top reflector, is created for the GeSn p-i-n structure to enhance the light-matter interaction. The responsivity experiments demonstrate that the photodetection range is extended to 1820 nm, completely covering all the telecommunication bands, because of the introduction of 2.5% Sn in the photon-absorbing layer. In addition, the responsivity is significantly enhanced by the resonant cavity effects, and a responsivity of 0.376 A/W in the telecommunication C-band is achieved that is significantly higher than that of conventional GeSn-based PDs. These results demonstrate the feasibility of CMOS-compatible, high-responsivity GeSn-based PDs for shortwave infrared applications. (c) 2018 Optical Society of America
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