1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 mu m wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated. High temperature operation with continuous wave lasing up to 100 degrees C is obtained. Threshold current densities as low as 205 A/cm(2) were measured. These devices are attractive candidates to use in uncooled silicon photonic transceivers in data centers. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement