4.6 Review

Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited]

期刊

OPTICS EXPRESS
卷 26, 期 10, 页码 13106-13121

出版社

OPTICAL SOC AMER
DOI: 10.1364/OE.26.013106

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资金

  1. National Science Foundation (NSF) (ECCS) [1611296]
  2. Defense Advanced Research Projects Agency (DARPA) (POEM) [HR0011-11-C-0100]
  3. Directorate For Engineering [1611296] Funding Source: National Science Foundation
  4. Div Of Electrical, Commun & Cyber Sys [1611296] Funding Source: National Science Foundation
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1701596] Funding Source: National Science Foundation

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Integrating photonics with advanced electronics leverages transistor performance, process fidelity and package integration, to enable a new class of systems-on-a-chip for a variety of applications ranging from computing and communications to sensing and imaging. Monolithic silicon photonics is a promising solution to meet the energy efficiency, sensitivity, and cost requirements of these applications. In this review paper, we take a comprehensive view of the performance of the silicon-photonic technologies developed to date for photonic interconnect applications. We also present the latest performance and results of our zero-change silicon photonics platforms in 45 nm and 32 nm SOI CMOS. The results indicate that the 45 nm and 32 nm processes provide a sweet-spot for adding photonic capability and enhancing integrated system applications beyond the Moore-scaling, while being able to offload major communication tasks from more deeply-scaled compute and memory chips without complicated 3D integration approaches. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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