Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si

Hetero-epitaxial growth of high quality InP on a complementary metal-oxide-semiconductor (CMOS)-compatible Si platform is compelling for monolithic integration of optoelectronics. It will provide the combined strength of mainstream mature InP-based photonic integrated circuits (PIC) technologies and large-volume, low-cost silicon-based manufacturing foundries. Direct monolithic integration of InP-based laser diodes (LDs) on silicon helps fully exploit the potential of silicon photonics and benefits the application of dense wavelength division multiplexing (DWDM) for telecommunications. Here, we report the first InGaAs/InAlGaAs multi-quantum-well (MQW) lasers directly grown on on-axis V-grooved (001) Si by metalorganic chemical vapor deposition (MOCVD). Lasing near 1.5 mu m was achieved for the first time with a threshold current density Jth = 3.3 kA/cm(2) under pulsed current injection at room temperature. A high characteristic temperature T-0 of 133 K in the range of 20 degrees C-40 degrees C was measured. These results demonstrate the potential of adopting this large-area InP-on-Si substrate for integrating diverse III-V laser diodes, photodetectors, and high-frequency and high-speed transistors. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement