期刊
OPTICS EXPRESS
卷 26, 期 4, 页码 4842-4852出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.26.004842
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资金
- Japan Society for the Promotion of Science (JSPS) [JP26709022]
- Grants-in-Aid for Scientific Research [26709022] Funding Source: KAKEN
We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A pi phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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