期刊
OPTICS EXPRESS
卷 26, 期 9, 页码 11568-11576出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.26.011568
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- New Energy and Industrial Technology Development Organization (NEDO)
Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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