期刊
OPTICS COMMUNICATIONS
卷 411, 期 -, 页码 114-118出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2017.11.004
关键词
InAs/GaAs quantum dots; Microdisk cavity; Purcell effect; Single photon emissions
类别
资金
- National Key Research and Development Program of China [2016YFA0301202]
- National Natural Science Foundation of China [11474275, 61674135, 91536101]
An approach to integrate InAs/GaAs quantum dots (QDs) active layer on SiO2/Si chip for single photon emitter is demonstrated. The QDs are embedded in GaAs/SiO2 hybrid whispering gallery mode microdisks with the diameters of 10 and 5 mu m, corresponding to the quality factors (Q) of 2287 +/- 167 and 4366 +/- 208, respectively. Temperature tuning QD-cavity resonance is observed. The cavity-enhanced exciton spontaneous emission and single photon emission characteristics are studied. (C) 2017 Elsevier B.V. All rights reserved.
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