期刊
OPTICS AND LASERS IN ENGINEERING
卷 102, 期 -, 页码 26-33出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.optlaseng.2017.10.012
关键词
Controllable laser thermal cleavage; Sapphire wafer; Thermal stress; Water cooling
类别
资金
- National Natural Science Foundation of China (NSFC) [51375118]
- Shenzhen Government Research Foundation [GJHZ20140419142750948]
Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active reseaich area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained. (C) 2017 Elsevier Ltd. All rights reserved.
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