期刊
OPTICAL MATERIALS
卷 78, 期 -, 页码 365-369出版社
ELSEVIER
DOI: 10.1016/j.optmat.2018.02.052
关键词
InGaN/GaN quantum disk; Photoluminescence; Quantum confined Stark Effect
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2015R1D1A1A01058332, 2016R1D1A1B03935688, 2015M2A2A6A02045251, 2016R1A6A1A03012877]
- EPSRC [EP/R044554/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/R044554/1] Funding Source: researchfish
- National Research Foundation of Korea [2016R1D1A1B03935688, 2015R1D1A1A01058332] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nano rods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities. (C) 2018 Elsevier By. All rights reserved.
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