Monte Carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (411 and 6H) substrates finding that the growth on misoriented (4 degrees-10 degrees degree off) 611 substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths.