期刊
SILICON CARBIDE AND RELATED MATERIALS 2012
卷 740-742, 期 -, 页码 295-300出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.295
关键词
heteroepitaxial growths; surface morphology; polytypes; Monte Carlo simulations
We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (411 and 6H) substrates finding that the growth on misoriented (4 degrees-10 degrees degree off) 611 substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据