期刊
SILICON CARBIDE AND RELATED MATERIALS 2012
卷 740-742, 期 -, 页码 485-489出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.485
关键词
Silicon Carbide; Native oxide; Ohmic contact; Schottky contact
The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650 degrees C through rapid thermal annealing (RTA) and it was completely removed at 1000 degrees C RTA. The residue of native oxide layer resulted in the Schottky characteristics. High temperature annealing (>950 degrees C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.
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