期刊
SILICON CARBIDE AND RELATED MATERIALS 2012
卷 740-742, 期 -, 页码 117-+出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.740-742.117
关键词
graphene; SiC; strain; CVD; propane; hydrogen
We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.
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