4.8 Article

Even-denominator fractional quantum Hall states at an isospin transition in monolayer graphene

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NATURE PHYSICS
卷 14, 期 9, 页码 930-935

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41567-018-0190-0

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资金

  1. National Science Foundation [DMR-1654186, DMR-1157490]
  2. Army Research Office [69188PHH]
  3. David and Lucile Packard Foundation
  4. Elings Prize Fellowship in Science of the California Nanosystems Institute at the University of California, Santa Barbara (UCSB)
  5. State of Florida
  6. Elemental Strategy Initiative
  7. Japan Society for the Promotion of Science KAKENHI [JP15K21722]

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In monolayer graphene, the two inequivalent sublattices of carbon atoms combine with the electron spin to give electrons a nearly fourfold degenerate internal isospin. At high magnetic fields, the isospin degeneracy increases the already large intrinsic degeneracy of the two-dimensional Landau levels, making low-disorder graphene systems a versatile platform for studying multicomponent quantum magnetism. Here, we describe magnetocapacitance experiments of ultraclean monolayer graphene devices in which a hexagonal boron nitride substrate breaks the symmetry between carbon sublattices. We observe a phase transition in the isospin system, which is marked by unusual transitions in odd-denominator fractional quantum Hall states for filling factors nu near charge neutrality and by the unexpected appearance of incompressible even-denominator fractional quantum Hall states at nu = +/- 1/2 and nu = +/- 1/4. We propose a scenario in which the observed states are multicomponent fractional quantum Hall states incorporating correlations between electrons on different carbon sublattices, associated with a quantum Hall analogue of the Neel-to-valence bond solid transition that occurs at charge neutrality.

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