4.8 Article

Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

期刊

NATURE NANOTECHNOLOGY
卷 13, 期 2, 页码 152-+

出版社

NATURE RESEARCH
DOI: 10.1038/s41565-017-0022-x

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资金

  1. Welch Foundation [F-1672]
  2. US National Science Foundation (NSF) [DMR-1306878, EFMA-1542747]
  3. Materials Research Science and Engineering Center [DMR-1720595]
  4. KAUST (Saudi Arabia)
  5. MOST, Academia Sinica (Taiwan)
  6. TCECM, Academia Sinica (Taiwan)
  7. AOARD (USA) [FA23861510001]
  8. National Natural Science Foundation of China [11774268]
  9. Yan Jici Talent Students Program
  10. NSF [DMR-1719875, DMR-1429155]
  11. Division Of Materials Research [1306878] Funding Source: National Science Foundation
  12. Emerging Frontiers & Multidisciplinary Activities [1542747] Funding Source: National Science Foundation

向作者/读者索取更多资源

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moire pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

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