期刊
NATURE MATERIALS
卷 17, 期 7, 页码 625-+出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41563-018-0098-1
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资金
- National Science Foundation [DMR-1611525]
- Go KRICT Project for Future Technology of the Korea Research Institute of Chemical Technology (KRICT)
- Argonne National Laboratory [DE-AC02-06CH11357]
- US Department of Energy, Office of Science, Office of Basic Energy Sciences (Theory FWP) Materials Sciences and Engineering Division [DE-AC02-05CH11231]
- Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- Japan Society for the Promotion of Science (JSPS) [15K21721]
- US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231, PChem KC3103]
- Arkema
- NSF GRFP
- Direct For Mathematical & Physical Scien [1611525] Funding Source: National Science Foundation
Conductive metal-organic frameworks are an emerging class of three-dimensional architectures with degrees of modularity, synthetic flexibility and structural predictability that are unprecedented in other porous materials. However, engendering long-range charge delocalization and establishing synthetic strategies that are broadly applicable to the diverse range of structures encountered for this class of materials remain challenging. Here, we report the synthesis of KxFe2(BDP)(3) (0 <= x <= 2; BDP2- =1,4-benzenedipyrazolate), which exhibits full charge delocalization within the parent framework and charge mobilities comparable to technologically relevant polymers and ceramics. Through a battery of spectroscopic methods, computational techniques and single-microcrystal field-effect transistor measurements, we demonstrate that fractional reduction of Fe-2(BDP)(3) results in a metal-organic framework that displays a nearly 10,000-fold enhancement in conductivity along a single crystallographic axis. The attainment of such properties in a KxFe2(BDP)(3) field-effect transistor represents the realization of a general synthetic strategy for the creation of new porous conductor-based devices.
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