期刊
NANOTECHNOLOGY
卷 29, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaa0eb
关键词
DIBS; memristor; synapse; neuromorphic computing
资金
- Ministry of Electronics and Information Technology (MeitY), Government of India under Visvesvaraya PhD Scheme for Electronics and Information Technology
- Council of Scientific and Industrial Research (CSIR)
Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective structure would promote much cheaper synapse for artificial neural network.
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