4.6 Article

Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering

期刊

NANOTECHNOLOGY
卷 29, 期 5, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaa0eb

关键词

DIBS; memristor; synapse; neuromorphic computing

资金

  1. Ministry of Electronics and Information Technology (MeitY), Government of India under Visvesvaraya PhD Scheme for Electronics and Information Technology
  2. Council of Scientific and Industrial Research (CSIR)

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Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective structure would promote much cheaper synapse for artificial neural network.

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