期刊
NANOTECHNOLOGY
卷 29, 期 19, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaace9
关键词
transition metal dichalcogenide; MoS2; grain boundary; STM/S; charging effect; mid-gap states
资金
- National Science Foundation [DMR-1508560]
- Direct For Mathematical & Physical Scien [1734017] Funding Source: National Science Foundation
- Division Of Materials Research [1734017] Funding Source: National Science Foundation
Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.
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