期刊
NANOSCALE
卷 10, 期 2, 页码 592-602出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr06248f
关键词
-
类别
资金
- NSFC Research Fund for International Young Scientists [61550110243]
- Scientific Research Foundation of Graduate School of Southeast University [YBJJ1714]
- Jiangsu Province College Graduate Research Innovation Program [KYLX15_0100, KYLX15_0101]
- National Key R&D Program of China [2016YFB0401600]
- National Natural Science Foundation Project [61674029, 61372030, 61571124]
- Natural Science Foundation Project of Jiangsu Province [BK20151417]
We report an inverted and multilayer quantum dot light emitting diode (QLED) which boosts high efficiency by tuning the energy band alignment between charge transport and light emitting layers. The electron transport layer (ETL) was ZnO nanoparticles (NPs) with an optimized doping concentration of cesium azide (CsN3) to effectively reduce electron flow and balance charge injection. This is by virtue of a 0.27 eV upshift of the ETL's conduction band edge, which inhibits the quenching of excitons and preserves the superior emissive properties of the quantum dots due to the insulating characteristics of CsN3. The demonstrated QLED exhibits a peak current efficiency, power efficiency and external quantum efficiency of up to 13.5 cd A(-1), 10.6 lm W-1 and 13.4% for the red QLED, and correspondingly 43.1 cd A(-1) 33.6 lm W-1 and 9.1% for green, and 4.1 cd A(-1), 2.0 lm W-1 and 6.6% for the blue counterparts. Compared with QLEDs without optimization, the performance of these modified devices shows drastic improvement by 95.6%, 39.4% and 36.7%, respectively. This novel device architecture with heterogeneous energy levels reported here offers a new design strategy for next-generation high efficiency QLED displays and solid-state lighting technologies.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据