期刊
NANOSCALE
卷 10, 期 14, 页码 6300-6305出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr00307f
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资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MSIP) [2017R1A2B3008628, 2016M3A7B4900135, 2015R1A4A1041523]
- NRF - Ministry of Education [2015R1A6A1A03031833]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry Energy (MOTIE) [20163030013980]
To date, most of the studies on quantum dot-light-emitting diodes (QLEDs) have been dedicated to the fabrication of high-efficiency monochromatic devices. However, for the ultimate application of QLEDs to the next-generation display devices, QLEDs should possess a full-color emissivity. In this study, we report the fabrication of all-solution-processed full-color-capable white QLEDs with a standard device architecture, where sequentially stacked blue (B)/green (G)/red (R) quantum dot (QD)-emitting layers (EMLs) are sandwiched by poly(9-vinylcarbazole) as the hole transport layer and ZnO nanoparticles (NPs) as the electron transport layer. To produce interlayer mixing-free, well-defined B/G/R QD layering assemblies via successive spin casting, an ultrathin ZnO NP buffer is inserted between different-colored QD layers. The present full-color-capable white QLED exhibits high device performance with the maximum values of 16241 cd m(-2) for luminance and 6.8% for external quantum efficiency. The promising results indicate that our novel EML design of ZnO NP buffer-mediated QD layer stacking may afford a viable means towards bright, efficient full-color-capable white devices.
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