4.8 Article

Single photon emission from plasma treated 2D hexagonal boron nitride

期刊

NANOSCALE
卷 10, 期 17, 页码 7957-7965

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr08222c

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资金

  1. NSF [CMMI 1538127]
  2. Australian Research Council [DP140102721, DP180100077]
  3. FEI Company
  4. Asian Office of Aerospace Research and Development grant [FA2386-15-1-4044]
  5. NSFC [21573204, 21421063]
  6. MOST [2016YFA0200602]
  7. Strategic Priority Research Program of CAS [XDB01020300]
  8. USTC Supercomputer Centers
  9. Research Training Program (RTP) from the Australian government
  10. Div Of Civil, Mechanical, & Manufact Inn
  11. Directorate For Engineering [1538127] Funding Source: National Science Foundation

向作者/读者索取更多资源

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than similar to 700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.

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