4.8 Article

Observation of unconventional anomalous Hall effect in epitaxial CrTe thin films

期刊

NANO RESEARCH
卷 11, 期 6, 页码 3116-3121

出版社

TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1913-8

关键词

topological Hall effect; CrTe films; skyrmion phase; molecular beam epitaxy

资金

  1. National Natural Science Foundation of China [51561145005, 11427903]
  2. National Key R&D Program of China [2017YFA0206200, 2016YFA0302300]
  3. 1000-Youth talent program of China
  4. State Key Laboratory of Low-Dimensional Quantum Physics
  5. Beijing Advanced Innovation Center for Future Chip (ICFC)

向作者/读者索取更多资源

We have studied the magnetic and electrical transport properties of epitaxial NiAs-type CrTe thin films grown on SrTiO3(111) substrates. Unlike rectangle hysteresis loops obtained from magnetic measurements, we have identified intriguing extra bump/dip features from anomalous Hall experiments on the films with thicknesses less than 12 nm. This observed Hall anomaly is phenomenologically consistent with the occurrence of a topological Hall effect(THE) in chiral magnets with a skyrmion phase. Furthermore, the THE contribution can be tuned by the film thickness, showing the key contribution of asymmetric interfaces in stabilizing N,el-type skyrmions. Our work demonstrates that a CrTe thin film on SrTiO3(111) substrates is a good material candidate for studying real-space topological transport.

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