期刊
NANO LETTERS
卷 18, 期 8, 页码 4710-4715出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01030
关键词
Single-photon sources; hexagonal boron nitride; Stark effect; van der Waals heterostructures
类别
资金
- New Faculty Research Fund of Ajou University
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy, Republic of Korea [20164030201380]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2017R1C1B5077000]
- National Research Foundation of Korea [2017R1C1B5077000] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Single-photon emitters play an essential role in quantum technologies, including quantum computing and quantum communications. Atomic defects in hexagonal boron nitride (h-BN) have recently emerged as new room-temperature single-photon emitters in solid-state systems, but the development of scalable and tunable h-BN single-photon emitters requires external methods that can control the emission energy of individual defects. Here, by fabricating van der Waals heterostructures of h-BN and graphene, we demonstrate the electrical control of single-photon emission from atomic defects in h-BN via the Stark effect. By applying an out-of-plane electric field through graphene gates, we observed Stark shifts as large as 5.4 nm per GV/m. The Stark shift generated upon a vertical electric field suggests the existence of out-of-plane dipole moments associated with atomic defect emitters, which is supported by first-principles theoretical calculations. Furthermore, we found field-induced discrete modification and stabilization of emission intensity, which were reversibly controllable with an external electric field.
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