期刊
NANO LETTERS
卷 18, 期 8, 页码 4885-4890出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01552
关键词
2D magnetism; chromium triiodide; tunnel magnetoresistance; spin filter
类别
资金
- NSERC [RGPIN-2017-03815]
- Korea Canada Cooperation Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [NRF-2017K1A3A1A12073407]
- Canada First Research Excellence Fund
- Ministry of Science and Technology of China [2016YFA0300504]
- National Natural Science Foundation of China [11574394, 11774423]
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.
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