期刊
NANO LETTERS
卷 18, 期 3, 页码 1739-1744出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b04819
关键词
Super resolution microscopy; boron nitride monolayer; point defects; localization microscopy
类别
资金
- Swiss National Science Foundation SNSF [200021 153653]
- EPSRC Cambridge NanoDTC [EP/L015978/1]
- Unity Through Knowledge Fund [22/15]
- H2020 CSA Twinning Project, RBI-T-WINNING [692194]
- Swiss National Science Foundation (SNF) [200021_153653] Funding Source: Swiss National Science Foundation (SNF)
Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to band optical transition energy. There has been a demand for developing direct optical imaging methods that would allow in situ characterization of individual defects with nanometer resolution. Here, we demonstrate the localization and quantitative counting of individual optically active defects in monolayer hexagonal boron nitride using single molecule localization microscopy. By exploiting the blinking behavior of defect emitters to temporally isolate multiple emitters within one diffraction limited region, we could resolve two defect emitters with a point-to-point distance down to ten nanometers. The results and conclusion presented in this work add unprecedented dimensions toward future applications of defects in quantum information processing and biological imaging.
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