期刊
MICROSCOPY AND MICROANALYSIS
卷 24, 期 2, 页码 93-98出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1017/S143192761800017X
关键词
cathodoluminescence; InGaN; LED; nanowires; scanning transmission electron microscopy
资金
- Ohio Third Frontier
- The Ohio State University
- Institute for Materials Research (IMR) at The Ohio State University
- Army Research Office [W911NF-13-1-0329]
- National Science Foundation CAREER Award [DMR-1055164]
- National Science Foundation Graduate Research Fellowship Program [2011101708]
The ability to characterize recombination and carrier trapping processes in group-III nitride-based nanowires is vital to further improvements in their overall efficiencies. While advances in scanning transmission electron microscope (STEM)-based cathodoluminescence (CL) have offered some insight into nanowire behavior, inconsistencies in nanowire emission along with CL detector limitations have resulted in the incomplete understanding in nanowire emission processes. Here, two nanowire heterostructures were explored with STEM-CL: a polarization-graded AlGaN nanowire light-emitting diode (LED) with a GaN quantum disk and a polarization-graded AlGaN nanowire with three different InGaN quantum disks. Most nanowires explored in this study did not emit. For the wires that did emit in both structures, they exhibited asymmetrical emission consistent with the polarization-induced electric fields in the barrier regions of the nano-LEDs. In the AlGaN/InGaN sample, two of the quantum disks exhibited no emission potentially due to the three-dimensional landscape of the sample or due to limitations in the CL detection.
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