期刊
MICROELECTRONICS RELIABILITY
卷 80, 期 -, 页码 312-316出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.07.086
关键词
AlGaN/GaN HEMTs; Heavy-ion irradiation; Radiation damage; Gate leakage
资金
- National Natural Science Foundation of China [11505033]
- Distinguished Young Scientist Program of Guangdong Province [2015A030306002]
- Innovation Young Talent of Science and Technology of Guangdong Province [2015TQ01X030]
- National Post-doctoral Program for Innovative Talents [BX201600037]
Degradation characteristics and mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated under swift heavy-ion irradiation. AlGaN/GaN HEMTs were exposed to 800 MeV Bi ions with fluence up to 5.28 x 10(10) ions/cm(2). Post-irradiation measurement shows that the saturation drain current reduced by 15%, the maximum transconductance decreased by more than 27%, and both the positive and negative gate characteristics degraded dramatically. By the off-state examination using the Photo Emission Microscopy (PEM), electroluminescence hot spots were found in the gate areas, which indicates new leakage passages produced by heavy-ion bombardment. Micro cross sections were prepared at hot spot areas by dual-beam focused ion beam (FIB) and examined using transmission electron microscope (TEM). The presence of latent tracks throughout the whole hetero-junction area was confirmed. Latent tracks, which related to the high density ionizing energy-loss, play a role of new leakage paths and account for the increment of gate leakage. Moreover, nonionizing energy-loss induced defects decrease the charge density in the two-dimensional electron gas (2DEG) and reduce the carrier mobility, leading to the degradation of device output performances. (C) 2017 Published by Elsevier Ltd.
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