4.4 Article

Spike-timing-dependent plasticity of polyaniline-based memristive element

期刊

MICROELECTRONIC ENGINEERING
卷 185, 期 -, 页码 43-47

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2017.10.017

关键词

Memristor; Resistive switching; Spike-timing-dependent plasticity; Artificial neural networks; Polyaniline

资金

  1. Russian Science Foundation [16-13-00052]

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A phenomenological model of the polyaniline (PANI) based memristive element's conductivity evolution during the application of varying voltages is presented in this work. The model is based on the experimental data on the conductance versus time dependencies for a set of applied voltages. The model could be used for simulation of complex artificial neural networks (ANNs) based on PANI memristive elements. We have experimentally shown that organic PANI-based memristive element could be trained by the biologically inspired spike-timing dependent plasticity mechanism. The results obtained by the simulation using the developed model are in a good agreement with the experimental data. It allows considering the usage of the organic memristive element as a synaptic element in a hardware realization of spiking ANNs capable of non-supervised learning. (C) 2017 Elsevier B.V. All rights reserved.

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