期刊
MICROELECTRONIC ENGINEERING
卷 187, 期 -, 页码 121-133出版社
ELSEVIER
DOI: 10.1016/j.mee.2017.11.003
关键词
ReRAM; Conduction mechanisms; Dynamics; Stability
资金
- Beijing Municipal Science & Technology Commission Program [D161100001716002, Z161100000216148]
- National Natural Science Foundation of China [61674092, 61674006, 61421005]
- National Key Research and Development Program of China [2017YFA0207600]
- Fundamental Research Funds for the Central Universities [DUT17RC(3)020]
- 1000 Youth Talents Program of China
Though resistive random access memory (ReRAM), a promising emerging memory technology, has achieved remarkable progress in technology development in recent years, our understanding of its conduction mechanisms, dynamic processes and stability issues is still limited. Because of this, this paper reviews recent research,on the understanding of carrier transport, dynamics of conductive filament (CF) and failure mechanisms of stability issues. Critical challenges are summarized to clarify various intrinsic and non-intrinsic characteristics of ReRAM. The details of ion transport and redox dynamics of resistive switching are reviewed. Failure mechanisms of stability issues are discussed, including the tail bits degradation (relaxation effect). Random Telegraph Noise (RTN) studies are also reviewed as a reflection of oxygen vacancy movements to understand other stability issues. (C) 2017 The Authors. Published by Elsevier B.V.
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