期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 74, 期 -, 页码 336-341出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.10.024
关键词
Ge-doped GaN; Sputtering; Thin film; Electrical property
类别
资金
- Ministry of Science and Technology of the Republic of China [104-2221-E-011-169-MY3, 106-2633-E-011-002]
The Ge-x-GaN thin films were grown on Si (100) substrates by RF reactive sputtering technology with single cermet targets at the Ge/(Ge + Ga) molar ratios of x = 0, 0.03, 0.07 and 1. The Ge-x-GaN films had a wurtzite structure with a preferential (1010) plane. The SEM images showed that Ge-GaN films were smooth, continuous, free from cracks and holes, and possessed grains in nanometer-size. All Ge-x-GaN films remained as n-type. While the highest conductivity was found to be 1.46 S cm(-1) in Ge-0.03-GaN film due to the highest carrier concentration of 2.55 x 10(18) cm(-3). Additionally, we made the n/p diodes with Ge-doped GaN films as n-type layers deposited on Si (100) substrate as p-type layer using by RF reactive sputtering technique. Their electronics characteristics were evaluated in terms of the barrier height, ideality factor, and series resistance.
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