期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 79, 期 -, 页码 66-73出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.01.019
关键词
Silicon solar cells; Hydrogen; Defect passivation; Minority carrier lifetime; Laser
类别
资金
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20173010012940]
- Ministry of Trade, Industry, and Energy, Korea Evaluation Institute of Industrial Technology (KEIT) [10043793]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10043793] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Hydrogen passivation, such as forming gas annealing and alneal (aluminum anneal) process, has been investigated for high efficient crystalline silicon solar cell structures, because the hydrogen atoms can reduce the surface recombination velocity. However, hydrogen could not diffuse deeply to passivate various defects within the silicon bulk. Further investigations into the properties of hydrogen in the silicon lead to the control of hydrogen atoms' charge states for their high diffusivity and reactivity. Also, research of the hydrogenated amorphous silicon nitride (a-SiNx:H) as a hydrogen source induced an 'advanced hydrogen passivation'. This paper provides a review of advanced hydrogen passivation applied on p-type, n-type and upgraded metallurgical grade crystalline silicon solar cells, respectively. Especially, the regeneration of boron-oxygen related defects, which cause carrier induced degradation, will be closely discussed since most of industrial solar cells are fabricated by boron-doped p-type silicon wafer. Moreover, laser-induced hydrogen passivation, which can locally recover defective area on the solar cells, will be addressed. In the conclusion, proper conditions of advanced hydrogen passivation for the successful improvement of minority carrier lifetime will be summarized.
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