期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 77, 期 -, 页码 83-87出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.12.006
关键词
Diffusion; Rapid thermal processing; Emitter formation; Silicon solar cells
类别
资金
- EPSRC [EP/F029624/2]
- Engineering and Physical Sciences Research Council [EP/F029624/2] Funding Source: researchfish
N-type emitters have been formed in p-type monocrystalline silicon with good uniformity and high peak doping concentration by proximity rapid thermal diffusion (PRTD). High diffusion rates are achievable for relatively low temperatures (< 1000 degrees C) with the addition of O-2 to the N-2 diffusion atmosphere. Solar cells have been prepared from the diffused samples to assess their performance and efficiencies of up to 6.0% have been achieved. The devices possess high series resistance and high recombination rates amongst other factors which limit their performance. Reducing the junction depth improves Jsc and efficiency but is accompanied by degrading shunt resistance and FF for junction thicknesses below similar to 400 nm. Further refinements of cell processing should improve efficiency and result in a diffusion process for forming shallow emitters for application to microstructured devices such as micropillar radial junction solar cells.
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