Defects related to electrical doping of 4H-SiC by ion implantation

This study resumes the status of our knowledge about the formation of extended and intrinsic defects in ion implanted 4H-SiC homo-epitaxial wafers during a high temperature post-implantation annealing in presence of homogeneous heating of the ion implanted wafer. A particular attention is given to the implanted dopant concentrations of interest for the fabrication of 4H-SiC electronic devices. The issue to preserve a high electrical activation and at the same time to avoid the formation of defects and/or to reduce those that have been formed is discussed. The case of the Al+ ion implanted 4H-SiC is used as example and original results are presented.