期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 78, 期 -, 页码 22-31出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.10.030
关键词
Silicon carbide; SiC MOSFETs; Field effect mobility; Interface traps; Power devices
类别
资金
- European Commission [NMP3-LA-2013-604057]
- Spanish Government [TEC2014-54357-C2-1-R]
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality of the SiO2/SiC interface severely limits the value of the channel field-effect mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed to overcome this issue. Nitridation methods are effective in increasing the channel mobility and have been adopted by manufacturers for the first generations of commercial power devices. Gate oxide doping techniques have also been successfully implemented to further increase the channel mobility, although device stability is compromised. The use of high-k dielectrics is also analyzed, together with the impact of different crystal orientations on the channel mobility. Finally, the performance of SiC MOSFETs in harsh environments is also reviewed with special emphasis on high temperature operation.
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