期刊
MATERIALS RESEARCH BULLETIN
卷 104, 期 -, 页码 244-249出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2018.03.039
关键词
Deposition; Thin films; Solar energy materials; Electrical properties
资金
- National Natural Science Foundation of China [11775139, 11375112]
- Shanghai City Committee of Science and Technology [15520500200]
- Innovation program of Shanghai City [CXSJ13077, CXSJ14098, XJ2016126]
SnS nanobelt thin films were deposited on glass substrates in acidic solution by chemical bath deposition (CBD) method. The belt-like morphologies of as-deposited SnS thin films were characterized by scanning electron microscope (SEM) and transmission electron microscopy (TEM). X-ray diffraction (XRD) and Raman measurements were carried out to confirm the crystal structures and phase purities of SnS nanobelt thin films. The morphologies and phase purities of SnS thin films were influenced greatly by the tin and sulfur precursors. The bandgaps of SnS nanobelts were determined to be 1.39-1.41 eV by UV-vis absorption and photoluminescence (PL) spectra. Current-voltage ((I-V)) and current-time ((I-T)) characteristics were studied to demonstrate the photoelectric performances of SnS nanobelt thin films.
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