Effect of sulfurization temperature of solution-processed Cu-2 SnS3 absorber for low cost photovoltaic cells

Cu2SnS3(CTS) films were deposited on the Mo-coated glass substrates by a facile solution method with a post-sulfurization technique and the CTS-based solar cells were also fabricated successfully. The influencing mechanisms of the sulfurization temperature on the CTS absorber were investigated systematically. It is found that the CTS absorber with high crystallinity and no impurity was obtained at the temperature of 540 degrees C confirmed by XRD and Raman analysis. Moreover, significant improvement of microstructure was achieved by increasing the temperature to 540 degrees C but voids appeared at higher temperature of 570 degrees C. The Monoclinic CTS thin films sulfurized at 540 degrees C were used to fabricate CTS solar cell with Mo/CTS/CdS/i-ZnO/AZO/Ag structure, exhibiting efficiency of 3.05%. (C) 2018 Elsevier B.V. All rights reserved.