期刊
MATERIALS LETTERS
卷 213, 期 -, 页码 11-14出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2017.10.117
关键词
Pseudo-Hall effect; 3C-SiC; Piezoresistive effect
资金
- Griffith University's New Researcher Grants
The pseudo-Hall effect in n-type single crystal 3C-SiC(100) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(100) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crys-tallographic orientation. N-type 3C-SiC(100) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(100). Contrary to p-type, the effect is maximum along [100] crystallographic orientation and minimum along [110] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(100) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors. (C) 2017 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据